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MIC5014/5015
Typical Characteristics All data measured using FET probe to minimize resistive loading
Micrel, Inc.
Supply Current
Gate Enhancement
High-Side Turn-On Time
6
(Output Asserted)
20
vs. Supply Voltage
300
vs. Gate Capacitance
5
4
15
250
200
3
2
10
5
150
100
1
Gate Enhancement =
V GATE – V SUPPLY
50
Supply = 12V
0
0
5 10
15 20 25
30
0
0
5 10
15 20 25
30
0
0
2 4 6 8 10
100
SUPPLY VOLTAGE (V)
High-Side Turn-On Time
Until Gate = Supply + 4V
100
SUPPLY VOLTAGE (V)
High-Side Turn-On Time
Until Gate = Supply + 4V
180
160
GATE CAPACITANCE (nF)
High-Side Turn-On Time
vs. Temperature
10
C GATE = 1300pF
10
C GATE = 3000pF
140
120
1
0.1
1
0.1
100
80
60
40
Supply = 12V
C GATE = 1000pF
20
0.01
0
4 8 12
16 20 24
28
0.01
0
4 8 12 16
20 24
28
0
-60 -30 0 30 60 90 120 150
100
SUPPLY VOLTAGE (V)
High-Side Turn-On Time
Until Gate = Supply + 10V
100
SUPPLY VOLTAGE (V)
High-Side Turn-On Time
Until Gate = Supply + 10V
10
AMBIENT TEMPERATURE ( ° C)
High-Side Turn-Off Time
Until Gate = 1V
10
C GATE = 1300pF
10
C GATE = 3000pF
8
6
1
1
4
C GATE = 3000pF
0.1
0.1
2
C GATE =
1300pF
0.01
0
5 10
15 20 25
30
0.01
0
5 10
15 20 25
30
0
0
5 10
15 20 25
30
1000
SUPPLY VOLTAGE (V)
Charge-Pump
Output Current
28V
10000
SUPPLY VOLTAGE (V)
Charge-Pump
Output Current
28V
10000
SUPPLY VOLTAGE (V)
Low-Side Turn-On Time
Until Gate = 4V
C GATE = 3000pF
1000
12V
1000
100
12V
Source connected
to ground: supply
100
voltage as noted
100
10 5V
3V
Source connected
to supply: supply
10
3V
5V
10
C GATE = 1300pF
voltage as noted
1
0 5 10
15
1
0 5 10
15
1
0
5 10
15 20 25
30
GATE-TO-SOURCE VOLTAGE (V)
MIC5014/5015
GATE-TO-SOURCE VOLTAGE (V)
4
SUPPLY VOLTAGE (V)
June 2005
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